Confined and chemically flexible grain boundaries in polycrystalline compound semiconductors

Advanced Energy Materials

Volumn 2, Issue 8, 2012, Pages 992-998

  Abou Ras, Daniel ^a   Schmidt, Sebastian S ^a   Caballero, Raquel ^a,g   Unold, Thomas ^a   Schock, Hans Werner ^e   Koch, Christoph T ^b,h   Schaffer, Bernhard ^c,d   Schaffer, Miroslava ^c,e   Choi, Pyuck Pa ^f   Cojocaru Mirédin, Oana ^f  

^a HAHN MEITNER INSTITUT   (Germany)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^c DARESBURY LABORATORY   (United Kingdom)

^d UNIVERSITY OF GLASGOW   (United Kingdom)

^e Department of Engineering George Holt Building ^*  (United Kingdom)

^f MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

^g UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^h UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM PROBE TOMOGRAPHY; ATOMIC PLANES; CHEMICAL FLEXIBILITY; COMPOSITIONAL CHANGES; CU(IN , GA)SE; GRAIN INTERIORS; IN-LINE ELECTRON HOLOGRAPHY; PHOTOVOLTAIC APPLICATIONS; POLYCRYSTALLINE; POLYCRYSTALLINE COMPOUNDS; POWER CONVERSION EFFICIENCIES; SECONDARY PHASIS; SUBNANOMETERS;

ATOMS; CONVERSION EFFICIENCY; ELECTRIC PROPERTIES; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON HOLOGRAPHY; GALLIUM; GRAIN BOUNDARIES; THIN FILMS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84865587698     PISSN: 16146832     EISSN: 16146840     Source Type: Journal    
DOI: 10.1002/aenm.201100764     Document Type: Article

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