Characterization of CuIn(Ga)Se2 thin films III. In-rich layers

Physica Status Solidi (A) Applied Research

Volumn 168, Issue 1, 1998, Pages 163-175

  Dirnstorfer, I ^a   Wagner, M T ^b,c   Hofmann, D M ^a   Lampert, M D ^b   Karg, F ^b   Meyer, B K ^a  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

^b SHELL GLOBAL SOLUTIONS INTERNATIONAL B V   (United States)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CARRIER CONCENTRATION; COPPER COMPOUNDS; ELECTRIC VARIABLES MEASUREMENT; ENERGY GAP; IMPURITIES; MATHEMATICAL MODELS;

COPPER INDIUM GALLIUM SELENIDE; PHOTOLUMINESCENCE SPECTROSCOPY; RADIATIVE RECOMBINATION; SHKLOVSKIJ-EFROS MODEL;

THIN FILMS;

EID: 0032115096     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1521-396x(199807)168:1<163::aid-pssa163>3.0.co;2-t     Document Type: Article

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