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Physical Review Letters

Volumn 105, Issue 11, 2010, Pages

Direct evidence for a reduced density of deep level defects at grain boundaries of Cu(In,Ga)Se2 thin films

(7) Monig H a,b Smith, Y a,c Caballero, R a Kaufmann, C A a Lauermann, I a Lux Steiner, Ch M a Sadewasser, S a

a HAHN MEITNER INSTITUT (Germany)

b YALE UNIVERSITY (United States)

c United States of America (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CU(IN , GA)SE; CU(IN , GA)SE2; DEEP-LEVEL DEFECTS; DENSITY OF DEFECTS; OPTOELECTRONIC PROPERTIES; RECOMBINATION ACTIVITY; SCANNING TUNNELING SPECTROSCOPY;

COPPER COMPOUNDS; DEFECTS; ELECTRON MOBILITY; GALLIUM; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SPECTROSCOPY;

DEFECT DENSITY;

EID: 77956539069 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.105.116802 Document Type: Article

Times cited : (64)

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