Improving GaN-on-silicon properties for GaN device epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 5, 2011, Pages 1503-1508

  Dadgar, A ^a   Hempel, T ^a   Blasing J ^a   Schulz, O ^b,c   Fritze, S ^a   Christen, J ^a   Krost, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b AZZURRO Semiconductors AG   (Germany)

^c LayTec GmbH   (Germany)

Author keywords

GaN on Si; HV FET; LED; MOVPE

Indexed keywords

BREAKDOWN FIELD; EDGE TYPE DISLOCATIONS; GAN GROWTH; GAN LAYERS; GAN MATERIAL; GAN-ON-SI; HIGH FREQUENCY; HIGH QUALITY; HIGH-VOLTAGE TRANSISTORS; HIGH-VOLTAGES; HV-FET; LED; LED STRUCTURE; MOVPE; SCREW TYPE; SILICON DOPING; SILICON SUBSTRATES;

GALLIUM NITRIDE; LIGHT EMITTING DIODES; MESFET DEVICES; SCREW DISLOCATIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955596946     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201001137     Document Type: Article

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