Ab initio investigation of adsorption of atomic and molecular hydrogen at GaN(0001) surface

Journal of Crystal Growth

Volumn 358, Issue 1, 2012, Pages 64-74

  Kempisty, Paweł ^a   Krukowski, Stanisław ^a,b  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

Author keywords

A1. Adsorption; A1. Surfaces; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ADSORPTION; ATOMS; DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; ENERGY DISSIPATION; GALLIUM NITRIDE; HYDROGEN; MOLECULAR PHYSICS; PHOTODISSOCIATION; SURFACE STATES;

AB INITIO INVESTIGATION; ADSORPTION ENERGIES; ATOM ADSORPTION; HYDRIDE VAPOR PHASE EPITAXY; HYDROGEN ATOMS; MOLECULAR HYDROGEN; SEMI CONDUCTING III-V MATERIALS; SURFACE ATOMS;

GAS ADSORPTION;

EID: 84865459597     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.08.004     Document Type: Conference Paper

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