Ab initio determination of atomic structure and energy of surface states of bare and hydrogen covered GaN (0001) surface - Existence of the Surface States Stark Effect (SSSE)

Surface Science

Volumn 605, Issue 7-8, 2011, Pages 695-713

  Kempisty, Paweł ^a   Stra̧k, Paweł ^a   Krukowski, Stanisław ^a,b  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

Author keywords

Density Functional Theory; Gallium nitride; Hydrogen; Surface

Indexed keywords

AB INITIO; ANGLE RESOLVED PHOTOELECTRON SPECTROSCOPY; ATOMIC STRUCTURE; BAND STATE; BANDBENDING; BRIDGE CONFIGURATION; CONDUCTION-BAND MINIMUM; DENSITY FUNCTIONAL THEORY CALCULATIONS; DESORPTION ENERGY; DISPERSIONLESS; EMPTYSTATE; ENERGY REDUCTION; HYDROGEN ADATOMS; MONOLAYER COVERAGE; P-TYPE GAN; SEMI-CONDUCTOR SURFACES; SLAB MODEL; STABLE STRUCTURES; SURFACE ATOMS; SURFACE ELECTRONIC STATE; SURFACE STATE; VALENCE-BAND MAXIMUMS;

ADATOMS; ADSORBATES; ATOMIC SPECTROSCOPY; ATOMS; CALCULATIONS; DENSITY FUNCTIONAL THEORY; DESORPTION; ELECTRIC FIELDS; ELECTRON MOBILITY; ELECTRONIC STATES; GALLIUM NITRIDE; HETEROJUNCTIONS; HYDROGEN; MOLECULES; MONOLAYERS; PHOTOELECTRON SPECTROSCOPY; QUANTUM THEORY; STARK EFFECT;

SURFACE STRUCTURE;

EID: 79952362638     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2011.01.005     Document Type: Article

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