Ab initio studies of electronic properties of bare GaN(0001) surface

Journal of Applied Physics

Volumn 106, Issue 5, 2009, Pages

  Kempisty, Pawe ^a,b   Krukowski, Stanisaw ^a,c   Strk, Pawe ^a,b   Sakowski, Konrad ^b  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO STUDY; ATOMIC LAYER; BAND GAPS; BAND STATE; BULK SEMICONDUCTORS; CONDUCTION-BAND MINIMUM; DFT CALCULATION; ELECTRIC POTENTIAL DIFFERENCE; ELECTRON DENSITIES; EXPERIMENTAL DATA; FERMI ENERGY; HIGH PRECISION; POTENTIAL PROFILES; SLAB THICKNESS; SURFACE STATE; VALENCE-BAND MAXIMUMS;

CONDUCTION BANDS; DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; FERMI LEVEL; FERMIONS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; LAPLACE EQUATION; POISSON EQUATION; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING GALLIUM; SULFUR COMPOUNDS;

SURFACE PROPERTIES;

EID: 70349323509     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3204965     Document Type: Article

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