The effect of deposition velocity and cluster size on thin film growth by Cu cluster deposition

Computational Materials Science

Volumn 65, Issue , 2012, Pages 230-234

  Gong, Hengfeng ^a   Lu, Wei ^b   Wang, Lumin ^b   Li, Gongping ^a   Zhang, Shixun ^a  

^a LANZHOU UNIVERSITY   (China)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Cluster deposition; Degree of epitaxy; Initial velocity; Molecular dynamics simulation; Thin film

Indexed keywords

CLUSTER DEPOSITION; CLUSTER SIZES; DEPOSITION VELOCITIES; INITIAL VELOCITIES; L-J POTENTIAL; LARGE CLUSTERS; MASS CENTERS; MOLECULAR DYNAMICS SIMULATIONS; SI(0 0 1); SMALL CLUSTERS; SUBSTRATE ATOM; SUBSTRATE SURFACE;

ATOMS; EPITAXIAL GROWTH; FILM GROWTH; MOLECULAR DYNAMICS; THIN FILMS; VAPOR DEPOSITION; VELOCITY;

DEPOSITION;

EID: 84865288603     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2012.07.001     Document Type: Article

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