The deposition of Fe or Co clusters on Cu substrate by molecular dynamic simulation

Surface Science

Volumn 605, Issue 1-2, 2011, Pages 46-53

  Hong, Zheng Han ^a   Hwang, Shun Fa ^b   Fang, Te Hua ^a  

^a NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

^b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Atomic stress; Ionized cluster beam deposition; Molecular dynamic; Surface roughness; Tight binding potential

Indexed keywords

ATOMIC STRESS; AVERAGE STRESS; CO CLUSTERS; CU SUBSTRATE; GROWTH PROCESS; INCIDENT ENERGY; INTERFACE INTERMIXING; IONIZED CLUSTER BEAM DEPOSITION; LOW ENERGIES; MANY-BODY POTENTIALS; MOLECULAR DYNAMIC SIMULATIONS; RADIAL DISTRIBUTION FUNCTIONS; SIMULATION RESULT; SUBSTRATE TEMPERATURE; TIGHT BINDING; TIGHT BINDING POTENTIAL;

ATOMS; BINDING ENERGY; CHEMICAL MODIFICATION; COBALT; COBALT COMPOUNDS; COMPUTER SIMULATION; COPPER; DISTRIBUTION FUNCTIONS; FILM GROWTH; IONIZATION; METAL ANALYSIS; MOLECULAR DYNAMICS; SUBSTRATES; SURFACE PROPERTIES;

SURFACE ROUGHNESS;

EID: 78649673538     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2010.09.020     Document Type: Article

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