Diffusion and interface reaction of Cu/Si (100) films prepared by cluster beam deposition

Chinese Physics Letters

Volumn 28, Issue 3, 2011, Pages

  Gao, Xing Xin ^a   Jia, Yan Hui ^a   Li, Gong Ping ^a   Cho, Seong Jin ^b   Kim, Hee ^b  

^a LANZHOU UNIVERSITY   (China)

^b Kyungsung University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER; COPPER COMPOUNDS; DEPOSITION; DIFFUSION IN SOLIDS; FILM PREPARATION; INTERFACES (MATERIALS); IONIZATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THIN FILMS; X RAY DIFFRACTION;

ANNEALING TEMPERATURES; ATOMIC DIFFUSIONS; CLUSTER BEAMS; DIFFUSION PHENOMENA; DIFFUSION-REACTION; INTERFACE REACTIONS; IONIZED CLUSTER BEAMS; NEUTRAL CLUSTERS; RUTHERFORD BACKSCATTERING SPECTROMETRY; SI(1 0 0);

ATOMS;

EID: 79952514976     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/28/3/033601     Document Type: Article

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