Effects of substrate cleaning and film thickness on the epitaxial growth of ultrahigh vacuum deposited Cu thin films on (001)Si

Applied Surface Science

Volumn 92, Issue , 1996, Pages 84-88

  Liu, C S ^a   Chen, L J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COPPER; CRYSTAL LATTICES; EPITAXIAL GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE CLEANING; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

COPPER LATTICE; FILM THICKNESS; SUBSTRATE CLEANING; ULTRAHIGH VACUUM DEPOSITED COPPER THIN FILMS;

THIN FILMS;

EID: 0030562263     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(95)00208-1     Document Type: Article

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