Parallel molecular dynamics simulation on thin-film formation process

Journal of Crystal Growth

Volumn 276, Issue 1-2, 2005, Pages 281-288

  Chen, Huawei ^a,b,c   Hagiwara, Ichiro ^a   Zhang, Dawei ^b   Huang, Tian ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TIANJIN UNIVERSITY   (China)

^c Department of Mechanical Sciences and Engineering ^*  (Japan)

Author keywords

A1. Computer simulation; A1. Substrates; A3. Atomic layer epitaxy; A3. Chemical vapor deposition processes; A3. Thin film

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; EPITAXIAL GROWTH; NANOSTRUCTURED MATERIALS; PROBABILITY; THIN FILMS;

ATOMIC LAYER EPITAXY; CHEMICAL VAPOR DEPOSITION PROCESSES; CLUSTERS; SUBSTRATE TEMPERATURE;

MOLECULAR DYNAMICS;

EID: 20344391394     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.304     Document Type: Article

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