A contactless method for determining the carrier mobility sum in silicon wafers

IEEE Journal of Photovoltaics

Volumn 2, Issue 1, 2012, Pages 41-46

  Rougieux, Fiacre E ^a   Zheng, Peiting ^a   Thiboust, Matthieu ^a   Tan, Jason ^a   Grant, Nicholas E ^a   MacDonald, Daniel H ^a   Cuevas, Andres ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Charge carrier mobility; photoconductance; silicon; solar cells

Indexed keywords

CARRIER INJECTION; COMPENSATION RATIO; CONTACTLESS METHODS; DEVICE STRUCTURES; DOPANT CONCENTRATIONS; INJECTION LEVELS; MINORITY-CARRIER MOBILITY; MOBILITY MODEL; PHOTOCONDUCTANCE; QUASI-STEADY-STATE PHOTOCONDUCTANCE; SURFACE PASSIVATION; TEMPERATURE DEPENDENCE; TEST SAMPLES;

CARRIER MOBILITY; CHARGE CARRIERS; SILICON; SOLAR CELLS;

SILICON WAFERS;

EID: 84865198533     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2011.2175705     Document Type: Article

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