Selective-area growth of thin GaN nanowires by MOCVD

Journal of Crystal Growth

Volumn 357, Issue 1, 2012, Pages 58-61

  Choi, Kihyun ^a   Arita, Munetaka ^b   Arakawa, Yasuhiko ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. Nanowires; A3. Metalorganic chemical vapor deposition; A3. Selective epitaxy; B2. GaN

Indexed keywords

B2. GAN; FILL-FACTOR; GAN NANOWIRES; GAN/SAPPHIRE; GROWTH OF GAN; LOW TEMPERATURES; MICROPHOTOLUMINESCENCE; PRECURSOR FLOW RATES; SELECTIVE AREA GROWTH; SELECTIVE EPITAXY; SHELL LAYERS;

GALLIUM ALLOYS; GAS SUPPLY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; OPTICAL PROPERTIES; VAPORS;

GALLIUM NITRIDE;

EID: 84865068291     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.07.025     Document Type: Article

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