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Chinese Physics Letters

Volumn 29, Issue 8, 2012, Pages

Forward current transport mechanism and Schottky barrier characteristics of a Ni/Au contact on n-GaN

(5) Yan, Da Wei a Zhu, Zhao Min a Cheng, Jian Min a Gu, Xiao Feng a Lu, Hai b

a JIANGNAN UNIVERSITY (China)

b NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; CAPACITANCE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NICKEL COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; THERMIONIC EMISSION;

CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT TRANSPORT MECHANISM; CURRENT-VOLTAGE; FORWARD BIAS; FORWARD CURRENTS; I - V CURVE; I-V METHOD; SCHOTTKY BARRIERS; SCHOTTKY-BARRIER HEIGHTS; TEMPERATURE DEPENDENT;

SCHOTTKY BARRIER DIODES;

EID: 84864957084 PISSN: 0256307X EISSN: 17413540 Source Type: Journal
DOI: 10.1088/0256-307X/29/8/087204 Document Type: Article

Times cited : (8)

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