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Volumn 96, Issue 8, 2010, Pages

Forward tunneling current in GaN-based blue light-emitting diodes

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BLUE LIGHT-EMITTING; CURRENT-VOLTAGE MEASUREMENTS; FORWARD BIAS; I - V CURVE; INGAN/GAN; MULTIQUANTUM WELLS; ROUTE CHANGES; SAPPHIRE SUBSTRATES; TEMPERATURE RANGE; THERMALLY INDUCED; TUNNELING ,; TUNNELING CURRENT; TUNNELING PROCESS;

EID: 77749254800     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3327332     Document Type: Article
Times cited : (97)

References (11)
  • 7
    • 1642454675 scopus 로고    scopus 로고
    • JAPNDE 0021-4922. 10.1143/JJAP.42.6800
    • Y. Koide, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 42, 6800 (2003). 10.1143/JJAP.42.6800
    • (2003) Jpn. J. Appl. Phys., Part 1 , vol.42 , pp. 6800
    • Koide, Y.1
  • 8
    • 77749249790 scopus 로고    scopus 로고
    • references therein for the effective carrier masses and the temperature dependence of bandgaof GaN
    • http://www.ioffe.ru/SVA/NSM/Semicond/ and references therein for the effective carrier masses and the temperature dependence of bandgap of GaN.
  • 11
    • 43049137706 scopus 로고    scopus 로고
    • Tunneling entity in different injection regimes of InGaN light emitting diodes
    • DOI 10.1063/1.2906326
    • C. L. Reynolds, Jr. and A. Patel, J. Appl. Phys. JAPIAU 0021-8979 103, 086102 (2008). 10.1063/1.2906326 (Pubitemid 351623673)
    • (2008) Journal of Applied Physics , vol.103 , Issue.8 , pp. 086102
    • Reynolds Jr., C.L.1    Patel, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.