Product code schemes for error correction in MLC NAND flash memories

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Volumn 20, Issue 12, 2012, Pages 2302-2314

  Yang, Chengen ^a   Emre, Yunus ^a   Chakrabarti, Chaitali ^a  

^a AZ 85281   (United States)

Author keywords

Error correction codes (ECCs); flash memories; multi level cell; product codes

Indexed keywords

BOSE-CHAUDHURI-HOCQUENGHEM CODES; ECC SCHEME; ERROR CONTROL CODING; ERROR CORRECTION CAPABILITY; ERROR CORRECTION CODES; FLEXIBLE PRODUCTS; HAMMING CODE; HARDWARE OVERHEADS; LOW LATENCY; MULTILEVEL CELL; NAND FLASH MEMORY; PARITY BITS; PRODUCT CODE; PROGRAM/ERASE; REED-SOLOMON; RS CODES; SOFT ERROR;

ERROR CORRECTION; FLASH MEMORY;

INVENTORY CONTROL;

EID: 84864925971     PISSN: 10638210     EISSN: None     Source Type: Journal    
DOI: 10.1109/TVLSI.2011.2174389     Document Type: Article

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