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Volumn 44, Issue 1, 2010, Pages 50-54

Empirical evaluation of NAND flash memory performance

Author keywords

[No Author keywords available]

Indexed keywords

EMPIRICAL EVALUATIONS; FLASH CHIPS; LIFE SPAN; MEMORY SYSTEMS; MINIMUM VALUE; NAND FLASH; NAND FLASH MEMORY; ON CURRENTS; PERFORMANCE PENALTIES; PROGRAM/ERASE; STORAGE SUBSYSTEMS; SYSTEM LEVELS;

EID: 77958118728     PISSN: 01635980     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/1740390.1740402     Document Type: Article
Times cited : (35)

References (14)
  • 5
    • 0347270401 scopus 로고    scopus 로고
    • Data retention characteristics of sub-100 nm NAND flash memory cells
    • J. Lee, J. Choi, D. Park, and K. Kim. Data retention characteristics of sub-100 nm NAND flash memory cells. IEEE Electron Device Letters, 24(12):748-750, 2003.
    • (2003) IEEE Electron. Device Letters , vol.24 , Issue.12 , pp. 748-750
    • Lee, J.1    Choi, J.2    Park, D.3    Kim, K.4
  • 6
    • 84955252413 scopus 로고    scopus 로고
    • Degradation of tunnel oxide by FN current stress and its effects on data retention characteristics of 90 nm NAND flash memory cells
    • J. Lee, J. Choi, D. Park, and K. Kim. Degradation of tunnel oxide by FN current stress and its effects on data retention characteristics of 90 nm NAND flash memory cells. In IEEE Int'l Reliability Physics Symposium, pages 497-501, 2003.
    • (2003) IEEE Int'l Reliability Physics Symposium , pp. 497-501
    • Lee, J.1    Choi, J.2    Park, D.3    Kim, K.4
  • 11
    • 57149135618 scopus 로고    scopus 로고
    • NAND flash memory and its role in storage architectures
    • M. Sanvido, F. Chu, A. Kulkarni, and R. Selinger. NAND flash memory and its role in storage architectures. Proceedings of the IEEE, 96(11):1864-1874, 2008.
    • (2008) Proceedings of the IEEE , vol.96 , Issue.11 , pp. 1864-1874
    • Sanvido, M.1    Chu, F.2    Kulkarni, A.3    Selinger, R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.