Direct nanoscale observation of resistance switching with au nano-dots embedded nb2o5 by scanning tunneling microscopy

Nanoscience and Nanotechnology Letters

Volumn 4, Issue 4, 2012, Pages 394-399

  Hota, M K ^a   Bera, M K ^a   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Conducting Filament; Nanodots; Resistive Switching; RRAM; STM

Indexed keywords

CONDUCTING FILAMENT; NANODOTS; RESISTIVE SWITCHING; RRAM; STM;

IRIDIUM; PLATINUM; SCANNING TUNNELING MICROSCOPY; SWITCHING SYSTEMS; TITANIUM NITRIDE;

NANOTECHNOLOGY;

EID: 84864835596     PISSN: 19414900     EISSN: 19414919     Source Type: Journal    
DOI: 10.1166/nnl.2012.1340     Document Type: Article

References (15)

1. W. W. Zhuang, W. Pan, and B. D. Ulrich, Int. Electron Devices Meet. Tech. Dig., San Francisco, CA, December (2002
2. C. Y. Liu and J. M. Hsu, Microelectron. Engg. 87, 2504 (2010
3. Q. F. Xia, W. Robinett, M. W. Cumbie, N. Banerjee, T. J. Cardinali, J. J. Yang, W. Wu, X. M. Li, W. M. Tong, D. B. Strukov, G. S. Snider, G. Medeiros-Ribeiro, and R. S. Williams, Nano Lett. 9, 3640 (2009
4. J. Borghetti, G. S. Snider, P. J. Kuekes, J. Joshua Yang, D. R. Stewart, and R. S. Williams, Nature (London) 464, 873 (2010
5. R. Waser and M. Aono, Nature Mater. 6, 833 (2007
6. C. C. Lin, B. C. Tu, C. C. Lin, C. H. Lin, and T. Y. Tseng, IEEE Electron Dev. Lett. 27, 725 (2006
7. J. P. Strachan, G. M. Ribeiro, J. J. Yang, M. X. Zhang, F. Miao, I. Goldfarb, M. Holt, V. Rose, and R. S. Williams, Appl. Phys. Lett. 98, 242114 (2011
8. N. Das, S. Tsui, Y. Y. Xue, Y. Q. Wang, and C. W. Chu, Phys. Rev. B 78, 235418 (2008
9. H. J. Sun, L. S. Hou, Y. Q. Wu, and X. D. Tang, Chinese Phys. Lett. 26, 024203 (2009
10. D. Ielmini, IEEE Trans. Electron. Dev. 58, 4309 (2011
11. J. Shin, J. Park, J. Lee, S. Park, S. Kim, W. Lee, I. Kim, D. Lee, and H. Hwang, IEEE Electron. Dev. Lett. 32, 958 (2011
12. D. H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X.-S. Li, G. S. Park, B. Lee, S. Han, M. Kim, and C. S. Hwang, Nat. Nanotechnol. 5, 148 (2010
13. Y. C. Ong, D. S. Ang, K. L. Pey, S. J. O'Shea, K. E. J. Goh, and C. Troadec, C. H. Tung, T. Kawanago, K. Kakushima, and H. Iwai, Appl. Phys. Lett. 91, 102905 (2007
14. J. Lee, H. Kim, T. Park, Y. Ko, J. Ryu, H. Jeon, J. Park, and H. Jeon, J. Vac. Sci. Technol. A 30, 01A104 (2012
15. B. Gao, S. Yu, N. Xu, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, B. Yu, and Y. Y. Wang, IEDM Tech. Dig., San Francisco, CA (2008), pp. 1-4.