Dispersion improvement of unipolar resistive switching Ni/Cu xO/Cu device by bipolar operation method

Microelectronic Engineering

Volumn 87, Issue 12, 2010, Pages 2504-2507

  Liu, Chih Yi ^a   Hsu, Jing Ming ^a  

^a NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

Author keywords

CuxO; Dispersion improvement; Memory

Indexed keywords

CONDUCTING FILAMENT; CUXO; DC VOLTAGE; LOW RESISTANCE; MEMORY; OPERATION METHODS; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SWITCHING BEHAVIORS; SWITCHING CYCLES; THERMOCHEMICAL EFFECTS; UNIPOLAR OPERATION; UNIPOLAR SWITCHING;

DISPERSIONS; SWITCHING SYSTEMS;

SWITCHING;

EID: 77956267401     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.06.003     Document Type: Article

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