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Volumn , Issue , 2010, Pages 434-437

Improvement in noise figure of wide-gate-head InP-based HEMTs with cavity structure

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY STRUCTURE; INP; LOW NOISE; MILLIMETER WAVE FREQUENCIES; MINIMUM NOISE FIGURE;

EID: 77955951149     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2010.5516196     Document Type: Conference Paper
Times cited : (5)

References (12)
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    • August
    • D.-H. Kim and A.del Alamo, "30-nm InAs Pseudomorphic HEMTs on an InP Substrate with a Current-gain Cutoff Frequency of 628 GHz," IEEE Electron Device Lett., Vol. 29, pp. 830-833, August 2008.
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    • Kim, D.-H.1    Del Alamo, A.2
  • 2
    • 41749090285 scopus 로고    scopus 로고
    • 610 GHz InAlAs/In0.75GaAs Metamorphic HEMTs with an Ultra-short 15-nm-Gate
    • December
    • S.-J. Yeon, M. Park, J. Choil and K. Seo, "610 GHz InAlAs/In0.75GaAs Metamorphic HEMTs with an Ultra-short 15-nm-Gate," IEDM'07 Tech. Dig., pp. 613-616, December 2007.
    • (2007) IEDM'07 Tech. Dig. , pp. 613-616
    • Yeon, S.-J.1    Park, M.2    Choil, J.3    Seo, K.4
  • 3
    • 34748821742 scopus 로고    scopus 로고
    • InAlAs/InGaAs HEMTs with Minimum Noise Figure of 1.0 dB at 94 GHz
    • May
    • T. Takahashi, M. Sato, K. Makiyama, T. Hirose, and N. Hara, "InAlAs/InGaAs HEMTs with Minimum Noise Figure of 1.0 dB at 94 GHz," Proc. IPRM'07, pp. 55-58, May 2007.
    • (2007) Proc. IPRM'07 , pp. 55-58
    • Takahashi, T.1    Sato, M.2    Makiyama, K.3    Hirose, T.4    Hara, N.5
  • 4
    • 33746338850 scopus 로고    scopus 로고
    • 3 S/mm Extrinsic Transconductance of InP-based High Electron Mobility Transistor by Vertical and Lateral Scale-down
    • July
    • H. Matsuzaki, T. Maruyama, T. Enoki and M. Tokumitsu, "3 S/mm Extrinsic Transconductance of InP-based High Electron Mobility Transistor by Vertical and Lateral Scale-down," Electron. Lett., Vol. 42 No. 15, pp. 883-884, July 2006.
    • (2006) Electron. Lett. , vol.42 , Issue.15 , pp. 883-884
    • Matsuzaki, H.1    Maruyama, T.2    Enoki, T.3    Tokumitsu, M.4
  • 5
    • 33947612552 scopus 로고    scopus 로고
    • Lateral Scale Down of InGaAs/InAs Composite-channel HEMTs with Tungsten-based Tiered Ohmic Structure for 2-S/mm gm and 500-GHz fT
    • March
    • H. Matsuzaki, T. Maruyama, T. Koasugi, H. Takahashi, M. Tokumitsu and T. Enoki, "Lateral Scale Down of InGaAs/InAs Composite-channel HEMTs with Tungsten-based Tiered Ohmic Structure for 2-S/mm gm and 500-GHz fT," IEEE Trans. Electron Devices, Vol. 54, No. 3, pp. 378-384, March 2007.
    • (2007) IEEE Trans. Electron Devices , vol.54 , Issue.3 , pp. 378-384
    • Matsuzaki, H.1    Maruyama, T.2    Koasugi, T.3    Takahashi, H.4    Tokumitsu, M.5    Enoki, T.6
  • 8
    • 70149087802 scopus 로고    scopus 로고
    • Improvement in High Frequency and Noise Characteristics of InP-based HEMTs by Reducing Parasitic Capacitance
    • MoA 3.4, May
    • T. Takahashi, K. Makiyama, N. Hara, M. Sato, T. Hirose, "Improvement in High Frequency and Noise Characteristics of InP-based HEMTs by Reducing Parasitic Capacitance," Proc. IPRM'08, MoA 3.4, May 2008.
    • (2008) Proc. IPRM'08
    • Takahashi, T.1    Makiyama, K.2    Hara, N.3    Sato, M.4    Hirose, T.5
  • 11
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    • Microwave Properties of Schottky-barrier Field-effect Transistors
    • March
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  • 12
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    • July
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.