Metamorphic HEMT technology for submillimeter-wave MMIC applications

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2010, Pages 425-430

  Leuther, A ^a   Tessmann, A ^a   Kallfass, I ^a   Massler, H ^a   Loesch, R ^a   Schlechtweg, M ^a   Mikulla, M ^a   Ambacher, O ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIER CIRCUITS; CURRENT LIMITS; DEVICE-SCALING; ELECTRON SHEET DENSITY; GAAS SUBSTRATES; GATE LENGTH; GROUNDED COPLANAR WAVEGUIDES; HETEROSTRUCTURES; INALGAAS; LINEAR GAIN; MAXIMUM TRANSCONDUCTANCE; METAMORPHIC HEMTS; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; ON-WAFER PROBES; OPERATION FREQUENCY; SOURCE RESISTANCE; TRANSIT FREQUENCY;

COPLANAR WAVEGUIDES; ELECTRON MOBILITY; GALLIUM ALLOYS; INDIUM; INDIUM PHOSPHIDE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NANOTECHNOLOGY; SUBMILLIMETER WAVES; TECHNOLOGY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77955992167     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2010.5516205     Document Type: Conference Paper

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