Noise figure improvement in InP-Based HEMTs using wide gate head and cavity structure

IEEE Electron Device Letters

Volumn 33, Issue 2, 2012, Pages 206-208

  Takahashi, Tsuyoshi ^a   Sato, Masaru ^a   Nakasha, Yasuhiro ^a   Hirose, Tatsuya ^a   Hara, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Cavity; gate head; high electron mobility transistor (HEMT); noise figure

Indexed keywords

CAVITY; CAVITY STRUCTURE; GATE HEAD; GATE REGION; GATE RESISTANCE; MINIMUM NOISE FIGURE; NOISE FIGURE IMPROVEMENT; PARASITIC CAPACITANCE;

CAPACITANCE; NOISE FIGURE; SEMICONDUCTING ALUMINUM COMPOUNDS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84856285073     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2175360     Document Type: Article

References (12)

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