Improvement of circuit-speed of HEMTs IC by reducing the parasitic capacitance

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 727-730

  Makiyama, K ^a   Takahashi, T ^a   Suzuki, T ^a   Sawada, K ^a   Ohki, T ^a   Nishi, M ^a   Hara, N ^a   Takikawa, M ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC FILMS; GATES (TRANSISTOR); INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSMISSION ELECTRON MICROSCOPY; WAVEFORM ANALYSIS;

PARASITIC CAPACITANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0842331304     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Otsuji et al., IEE Electron. Lett., Vol. 33, Pp 1376-1377 (1997).
2. Mehran Mokhtari et al., 2002 IEEE GaAs Digest, Pp 291-293
3. Sano et al., IEEE Trans. Electron Devices, Vol. 42, No. 4, Pp 785-786 (1995).