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Volumn 258, Issue 24, 2012, Pages 9969-9976

Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films

Author keywords

Ga:ZnO thin films; Morphological; Optoelectrical; Raman; XPS

Indexed keywords

CHEMICAL ANALYSIS; CHEMICAL BONDS; CRACKING (CHEMICAL); CRYSTAL ORIENTATION; ELECTRONIC STATES; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; METALLIC FILMS; OPTICAL FILMS; OXIDE FILMS; PHONONS; SEMICONDUCTOR DOPING; SPECIFIC HEAT; SPRAY PYROLYSIS; SUBSTRATES; THERMAL CONDUCTIVITY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE; ZINC SULFIDE;

EID: 84864669422     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.06.058     Document Type: Article
Times cited : (115)

References (47)
  • 36
    • 77956463043 scopus 로고
    • Academic Publishers Calcutta pp. 461-463
    • R.A. Smith Semiconductors 1989 Academic Publishers Calcutta pp. 461-463
    • (1989) Semiconductors
    • Smith, R.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.