Characterization of ZnO:Ga transparent contact electrodes for microcrystalline silicon thin film solar cells

Solar Energy Materials and Solar Cells

Volumn 94, Issue 3, 2010, Pages 397-401

  Lai, Kuang Chieh ^a   Liu, Chien Chih ^b   Lu, Chun hsiung ^c   Yeh, Chih Hung ^c   Houng, Mau Phon ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^c NexPower Technology Corporation   (Taiwan)

Author keywords

Gallium doped zinc oxide; Microcrystalline silicon; Solar cells; Transparent conductive oxide

Indexed keywords

CARRIER GAS; CONTACT ELECTRODES; FILL FACTOR; FILM QUALITY; MICROCRYSTALLINE SILICON THIN FILMS; PROCESS GAS; PROCESS TEMPERATURE; PROCESSING PARAMETERS; SEMICONDUCTOR INDUSTRY; SPUTTERING PARAMETERS; SPUTTERING POWER; THIN FILM SOLAR CELLS; TRANSPARENT CONDUCTIVE; TRANSPARENT CONDUCTIVE OXIDE; TRANSPARENT CONDUCTIVE OXIDES; WORKING PRESSURES; ZNO;

CELLS; CONDUCTIVE FILMS; DEPOSITION; ELECTRODES; MICROCRYSTALLINE SILICON; OPEN CIRCUIT VOLTAGE; OXIDE FILMS; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SOLAR CELLS; SWITCHING CIRCUITS; THIN FILM DEVICES; THIN FILMS; ZINC; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 75149176720     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2009.12.002     Document Type: Review

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