Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates

Nanotechnology

Volumn 21, Issue 33, 2010, Pages

  Sun, M H ^a   Leong, E S P ^a   Chin, A H ^a   Ning, C Z ^a   Cirlin, G E ^b,c   Yu, B Samsonenko ^b,c   Dubrovskii, V G ^b,c   Chuang, L ^d   Chang Hasnain, C ^d  

^a Arizona State University   (United States)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BAND-EDGE EMISSIONS; BLUE-SHIFTED; EXCITATION INTENSITY; GAAS; GROWTH DIRECTIONS; GROWTH TECHNIQUES; INAS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; PHOTOLUMINESCENCE PROPERTIES; PL MEASUREMENTS; QUANTIZATION EFFECTS; SELECTED AREA ELECTRON DIFFRACTION; SI SUBSTRATES; SI(111) SUBSTRATE; STRUCTURAL PARAMETER;

CHEMICAL BEAM EPITAXY; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; GOLD COATINGS; INDIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; ORGANIC CHEMICALS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SINGLE CRYSTALS;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 77957848372     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/33/335705     Document Type: Article

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