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Volumn 20, Issue 16, 2012, Pages 17359-17366

Electrically tunable electroluminescence from SiNx-based light-emitting devices

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTROLUMINESCENCE; SILVER;

EID: 84864610813     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.017359     Document Type: Article
Times cited : (15)

References (26)
  • 1
    • 14344278734 scopus 로고    scopus 로고
    • Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride
    • DOI 10.1103/PhysRevLett.86.1355
    • N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, "Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride", Phys. Rev. Lett. 86(7), 1355-1357 (2001). (Pubitemid 32188312)
    • (2001) Physical Review Letters , vol.86 , Issue.7 , pp. 1355-1357
    • Park, N.-M.1    Choi, C.-J.2    Seong, T.-Y.3    Park, S.-J.4
  • 2
    • 43349106409 scopus 로고    scopus 로고
    • Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices
    • R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, "Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices", Appl. Phys. Lett. 92(18), 181106 (2008).
    • (2008) Appl. Phys. Lett. , vol.92 , Issue.18 , pp. 181106
    • Huang, R.1    Dong, H.2    Wang, D.3    Chen, K.4    Ding, H.5    Wang, X.6    Li, W.7    Xu, J.8    Ma, Z.9
  • 3
    • 77954318019 scopus 로고    scopus 로고
    • Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes
    • G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, "Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes", Appl. Phys. Lett. 96(26), 263514 (2010).
    • (2010) Appl. Phys. Lett. , vol.96 , Issue.26 , pp. 263514
    • Lin, G.-R.1    Pai, Y.-H.2    Lin, C.-T.3    Chen, C.-C.4
  • 4
    • 55249104981 scopus 로고    scopus 로고
    • Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence
    • M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, "Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence", J. Appl. Phys. 104(8), 083505 (2008).
    • (2008) J. Appl. Phys. , vol.104 , Issue.8 , pp. 083505
    • Wang, M.1    Huang, J.2    Yuan, Z.3    Anopchenko, A.4    Li, D.5    Yang, D.6    Pavesi, L.7
  • 5
    • 67349168490 scopus 로고    scopus 로고
    • 3 plasma and annealing treatment
    • 3 plasma and annealing treatment", Physica E 41(6), 920-922 (2009).
    • (2009) Physica E , vol.41 , Issue.6 , pp. 920-922
    • Li, D.1    Huang, J.2    Yang, D.3
  • 6
    • 77957008874 scopus 로고    scopus 로고
    • Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film
    • Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, "Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film", Opt. Express 18(19), 20439-20444 (2010).
    • (2010) Opt. Express , vol.18 , Issue.19 , pp. 20439-20444
    • Cen, Z.H.1    Chen, T.P.2    Liu, Z.3    Liu, Y.4    Ding, L.5    Yang, M.6    Wong, J.I.7    Yu, S.F.8    Goh, W.P.9
  • 7
    • 75249092277 scopus 로고    scopus 로고
    • Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers
    • R. Huang, D. Q. Wang, H. L. Ding, X. Wang, K. J. Chen, J. Xu, Y. Q. Guo, J. Song, and Z. Y. Ma, "Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers", Opt. Express 18(2), 1144-1150 (2010).
    • (2010) Opt. Express , vol.18 , Issue.2 , pp. 1144-1150
    • Huang, R.1    Wang, D.Q.2    Ding, H.L.3    Wang, X.4    Chen, K.J.5    Xu, J.6    Guo, Y.Q.7    Song, J.8    Ma, Z.Y.9
  • 8
    • 78649840558 scopus 로고    scopus 로고
    • Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures
    • C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, "Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures", Adv. Mater. (Deerfield Beach Fla.) 22(44), 5058-5062 (2010).
    • (2010) Adv. Mater. (Deerfield Beach Fla.) , vol.22 , Issue.44 , pp. 5058-5062
    • Huh, C.1    Kim, K.-H.2    Kim, B.K.3    Kim, W.4    Ko, H.5    Choi, C.-J.6    Sung, G.Y.7
  • 9
    • 33747099938 scopus 로고    scopus 로고
    • Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency
    • B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, "Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency", Appl. Phys. Lett. 89(6), 063509 (2006).
    • (2006) Appl. Phys. Lett. , vol.89 , Issue.6 , pp. 063509
    • Kim, B.-H.1    Cho, C.-H.2    Park, S.-J.3    Park, N.-M.4    Sung, G.Y.5
  • 10
    • 54149118442 scopus 로고    scopus 로고
    • Electroluminescence from silicon-rich nitride/silicon superlattice structures
    • J. Warga, R. Li, S. N. Basu, and L. Dal Negro, "Electroluminescence from silicon-rich nitride/silicon superlattice structures", Appl. Phys. Lett. 93(15), 151116 (2008).
    • (2008) Appl. Phys. Lett. , vol.93 , Issue.15 , pp. 151116
    • Warga, J.1    Li, R.2    Basu, S.N.3    Dal Negro, L.4
  • 12
    • 59349084722 scopus 로고    scopus 로고
    • Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions
    • Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, "Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions", Appl. Phys. Lett. 94(4), 041102 (2009).
    • (2009) Appl. Phys. Lett. , vol.94 , Issue.4 , pp. 041102
    • Cen, Z.H.1    Chen, T.P.2    Ding, L.3    Liu, Y.4    Wong, J.I.5    Yang, M.6    Liu, Z.7    Goh, W.P.8    Zhu, F.R.9    Fung, S.10
  • 14
    • 84863042897 scopus 로고    scopus 로고
    • Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film
    • F. Wang, D. Li, D. Yang, and D. Que, "Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film", Appl. Phys. Lett. 100(3), 031113 (2012).
    • (2012) Appl. Phys. Lett. , vol.100 , Issue.3 , pp. 031113
    • Wang, F.1    Li, D.2    Yang, D.3    Que, D.4
  • 15
    • 0042968726 scopus 로고    scopus 로고
    • Surface plasmon subwavelength optics
    • DOI 10.1038/nature01937
    • W. L. Barnes, A. Dereux, and T. W. Ebbesen, "Surface plasmon subwavelength optics", Nature 424(6950), 824-830 (2003). (Pubitemid 37021717)
    • (2003) Nature , vol.424 , Issue.6950 , pp. 824-830
    • Barnes, W.L.1    Dereux, A.2    Ebbesen, T.W.3
  • 16
    • 45249124455 scopus 로고    scopus 로고
    • Influence of substrates in ZnO devices on the surface plasmon enhanced light emission
    • P. Cheng, D. Li, and D. Yang, "Influence of substrates in ZnO devices on the surface plasmon enhanced light emission", Opt. Express 16(12), 8896-8901 (2008).
    • (2008) Opt. Express , vol.16 , Issue.12 , pp. 8896-8901
    • Cheng, P.1    Li, D.2    Yang, D.3
  • 19
    • 79959365037 scopus 로고    scopus 로고
    • Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole-Frenkel current
    • Y. Yonamoto, Y. Inaba, and N. Akamatsu, "Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole-Frenkel current", Appl. Phys. Lett. 98(23), 232905 (2011).
    • (2011) Appl. Phys. Lett. , vol.98 , Issue.23 , pp. 232905
    • Yonamoto, Y.1    Inaba, Y.2    Akamatsu, N.3
  • 20
    • 36849108306 scopus 로고
    • Current transport and maximum dielectric strength of silicon nitride
    • S. M. Sze, "Current transport and maximum dielectric strength of silicon nitride", J. Appl. Phys. 38(7), 2951-2956 (1967).
    • (1967) J. Appl. Phys. , vol.38 , Issue.7 , pp. 2951-2956
    • Sze, S.M.1
  • 22
    • 0001454515 scopus 로고
    • Collective transport in arrays of small metallic dots
    • A. A. Middleton and N. S. Wingreen, "Collective transport in arrays of small metallic dots", Phys. Rev. Lett. 71(19), 3198-3201 (1993).
    • (1993) Phys. Rev. Lett. , vol.71 , Issue.19 , pp. 3198-3201
    • Middleton, A.A.1    Wingreen, N.S.2
  • 23
    • 77952846263 scopus 로고    scopus 로고
    • Space charge limited current in a gap combined of free space and solid
    • W. Chandra and L. K. Ang, "Space charge limited current in a gap combined of free space and solid", Appl. Phys. Lett. 96(18), 183501 (2010).
    • (2010) Appl. Phys. Lett. , vol.96 , Issue.18 , pp. 183501
    • Chandra, W.1    Ang, L.K.2
  • 24
    • 0035311173 scopus 로고    scopus 로고
    • Drift mobility measurements in a-SiNx: H
    • T. Güngör and H. Tolunay, "Drift mobility measurements in a-SiNx: H", J. Non-Cryst. Solids 282(2-3), 197-202 (2001).
    • (2001) J. Non-Cryst. Solids , vol.282 , Issue.2-3 , pp. 197-202
    • Güngör, T.1    Tolunay, H.2
  • 26
    • 0021374999 scopus 로고
    • Gap states in silicon-nitride
    • J. Robertson and M. J. Powell, "Gap states in silicon-nitride", Appl. Phys. Lett. 44(4), 415-417 (1984).
    • (1984) Appl. Phys. Lett. , vol.44 , Issue.4 , pp. 415-417
    • Robertson, J.1    Powell, M.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.