-
1
-
-
14344278734
-
Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride
-
DOI 10.1103/PhysRevLett.86.1355
-
N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, "Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride", Phys. Rev. Lett. 86(7), 1355-1357 (2001). (Pubitemid 32188312)
-
(2001)
Physical Review Letters
, vol.86
, Issue.7
, pp. 1355-1357
-
-
Park, N.-M.1
Choi, C.-J.2
Seong, T.-Y.3
Park, S.-J.4
-
2
-
-
43349106409
-
Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices
-
R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, "Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices", Appl. Phys. Lett. 92(18), 181106 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.92
, Issue.18
, pp. 181106
-
-
Huang, R.1
Dong, H.2
Wang, D.3
Chen, K.4
Ding, H.5
Wang, X.6
Li, W.7
Xu, J.8
Ma, Z.9
-
3
-
-
77954318019
-
Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes
-
G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, "Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes", Appl. Phys. Lett. 96(26), 263514 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.96
, Issue.26
, pp. 263514
-
-
Lin, G.-R.1
Pai, Y.-H.2
Lin, C.-T.3
Chen, C.-C.4
-
4
-
-
55249104981
-
Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence
-
M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, "Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence", J. Appl. Phys. 104(8), 083505 (2008).
-
(2008)
J. Appl. Phys.
, vol.104
, Issue.8
, pp. 083505
-
-
Wang, M.1
Huang, J.2
Yuan, Z.3
Anopchenko, A.4
Li, D.5
Yang, D.6
Pavesi, L.7
-
5
-
-
67349168490
-
3 plasma and annealing treatment
-
3 plasma and annealing treatment", Physica E 41(6), 920-922 (2009).
-
(2009)
Physica E
, vol.41
, Issue.6
, pp. 920-922
-
-
Li, D.1
Huang, J.2
Yang, D.3
-
6
-
-
77957008874
-
Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film
-
Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, "Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film", Opt. Express 18(19), 20439-20444 (2010).
-
(2010)
Opt. Express
, vol.18
, Issue.19
, pp. 20439-20444
-
-
Cen, Z.H.1
Chen, T.P.2
Liu, Z.3
Liu, Y.4
Ding, L.5
Yang, M.6
Wong, J.I.7
Yu, S.F.8
Goh, W.P.9
-
7
-
-
75249092277
-
Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers
-
R. Huang, D. Q. Wang, H. L. Ding, X. Wang, K. J. Chen, J. Xu, Y. Q. Guo, J. Song, and Z. Y. Ma, "Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers", Opt. Express 18(2), 1144-1150 (2010).
-
(2010)
Opt. Express
, vol.18
, Issue.2
, pp. 1144-1150
-
-
Huang, R.1
Wang, D.Q.2
Ding, H.L.3
Wang, X.4
Chen, K.J.5
Xu, J.6
Guo, Y.Q.7
Song, J.8
Ma, Z.Y.9
-
8
-
-
78649840558
-
Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures
-
C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, "Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures", Adv. Mater. (Deerfield Beach Fla.) 22(44), 5058-5062 (2010).
-
(2010)
Adv. Mater. (Deerfield Beach Fla.)
, vol.22
, Issue.44
, pp. 5058-5062
-
-
Huh, C.1
Kim, K.-H.2
Kim, B.K.3
Kim, W.4
Ko, H.5
Choi, C.-J.6
Sung, G.Y.7
-
9
-
-
33747099938
-
Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency
-
B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, "Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency", Appl. Phys. Lett. 89(6), 063509 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.89
, Issue.6
, pp. 063509
-
-
Kim, B.-H.1
Cho, C.-H.2
Park, S.-J.3
Park, N.-M.4
Sung, G.Y.5
-
10
-
-
54149118442
-
Electroluminescence from silicon-rich nitride/silicon superlattice structures
-
J. Warga, R. Li, S. N. Basu, and L. Dal Negro, "Electroluminescence from silicon-rich nitride/silicon superlattice structures", Appl. Phys. Lett. 93(15), 151116 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.93
, Issue.15
, pp. 151116
-
-
Warga, J.1
Li, R.2
Basu, S.N.3
Dal Negro, L.4
-
11
-
-
54949104376
-
Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons
-
B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, "Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons", Adv. Mater. (Deerfield Beach Fla.) 20(16), 3100-3104 (2008).
-
(2008)
Adv. Mater. (Deerfield Beach Fla.)
, vol.20
, Issue.16
, pp. 3100-3104
-
-
Kim, B.-H.1
Cho, C.-H.2
Mun, J.-S.3
Kwon, M.-K.4
Park, T.-Y.5
Kim, J.-S.6
Byeon, C.-C.7
Lee, J.8
Park, S.-J.9
-
12
-
-
59349084722
-
Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions
-
Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, "Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions", Appl. Phys. Lett. 94(4), 041102 (2009).
-
(2009)
Appl. Phys. Lett.
, vol.94
, Issue.4
, pp. 041102
-
-
Cen, Z.H.1
Chen, T.P.2
Ding, L.3
Liu, Y.4
Wong, J.I.5
Yang, M.6
Liu, Z.7
Goh, W.P.8
Zhu, F.R.9
Fung, S.10
-
13
-
-
79959273960
-
Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films
-
Z. H. Cen, T. P. Chen, L. Ding, Z. Liu, J. I. Wong, M. Yang, W. P. Goh, and S. Fung, "Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films", Appl. Phys., A Mater. Sci. Process. 104(1), 239-245 (2011).
-
(2011)
Appl. Phys., a Mater. Sci. Process.
, vol.104
, Issue.1
, pp. 239-245
-
-
Cen, Z.H.1
Chen, T.P.2
Ding, L.3
Liu, Z.4
Wong, J.I.5
Yang, M.6
Goh, W.P.7
Fung, S.8
-
14
-
-
84863042897
-
Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film
-
F. Wang, D. Li, D. Yang, and D. Que, "Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film", Appl. Phys. Lett. 100(3), 031113 (2012).
-
(2012)
Appl. Phys. Lett.
, vol.100
, Issue.3
, pp. 031113
-
-
Wang, F.1
Li, D.2
Yang, D.3
Que, D.4
-
15
-
-
0042968726
-
Surface plasmon subwavelength optics
-
DOI 10.1038/nature01937
-
W. L. Barnes, A. Dereux, and T. W. Ebbesen, "Surface plasmon subwavelength optics", Nature 424(6950), 824-830 (2003). (Pubitemid 37021717)
-
(2003)
Nature
, vol.424
, Issue.6950
, pp. 824-830
-
-
Barnes, W.L.1
Dereux, A.2
Ebbesen, T.W.3
-
16
-
-
45249124455
-
Influence of substrates in ZnO devices on the surface plasmon enhanced light emission
-
P. Cheng, D. Li, and D. Yang, "Influence of substrates in ZnO devices on the surface plasmon enhanced light emission", Opt. Express 16(12), 8896-8901 (2008).
-
(2008)
Opt. Express
, vol.16
, Issue.12
, pp. 8896-8901
-
-
Cheng, P.1
Li, D.2
Yang, D.3
-
17
-
-
9444296051
-
Organic electroluminescent devices
-
J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, "Organic electroluminescent devices", Science 273(5277), 884-888 (1996). (Pubitemid 26275151)
-
(1996)
Science
, vol.273
, Issue.5277
, pp. 884-888
-
-
Sheats, J.R.1
Antoniadis, H.2
Hueschen, M.3
Leonard, W.4
Miller, J.5
Moon, R.6
Roitman, D.7
Stocking, A.8
-
19
-
-
79959365037
-
Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole-Frenkel current
-
Y. Yonamoto, Y. Inaba, and N. Akamatsu, "Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole-Frenkel current", Appl. Phys. Lett. 98(23), 232905 (2011).
-
(2011)
Appl. Phys. Lett.
, vol.98
, Issue.23
, pp. 232905
-
-
Yonamoto, Y.1
Inaba, Y.2
Akamatsu, N.3
-
20
-
-
36849108306
-
Current transport and maximum dielectric strength of silicon nitride
-
S. M. Sze, "Current transport and maximum dielectric strength of silicon nitride", J. Appl. Phys. 38(7), 2951-2956 (1967).
-
(1967)
J. Appl. Phys.
, vol.38
, Issue.7
, pp. 2951-2956
-
-
Sze, S.M.1
-
22
-
-
0001454515
-
Collective transport in arrays of small metallic dots
-
A. A. Middleton and N. S. Wingreen, "Collective transport in arrays of small metallic dots", Phys. Rev. Lett. 71(19), 3198-3201 (1993).
-
(1993)
Phys. Rev. Lett.
, vol.71
, Issue.19
, pp. 3198-3201
-
-
Middleton, A.A.1
Wingreen, N.S.2
-
23
-
-
77952846263
-
Space charge limited current in a gap combined of free space and solid
-
W. Chandra and L. K. Ang, "Space charge limited current in a gap combined of free space and solid", Appl. Phys. Lett. 96(18), 183501 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.96
, Issue.18
, pp. 183501
-
-
Chandra, W.1
Ang, L.K.2
-
24
-
-
0035311173
-
Drift mobility measurements in a-SiNx: H
-
T. Güngör and H. Tolunay, "Drift mobility measurements in a-SiNx: H", J. Non-Cryst. Solids 282(2-3), 197-202 (2001).
-
(2001)
J. Non-Cryst. Solids
, vol.282
, Issue.2-3
, pp. 197-202
-
-
Güngör, T.1
Tolunay, H.2
-
25
-
-
34047113251
-
Epitaxial silicon oxynitride layer on a 6H-SiC (0001) surface
-
T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, "Epitaxial silicon oxynitride layer on a 6H-SiC (0001) surface", Phys. Rev. Lett. 98(13), 136105 (2007).
-
(2007)
Phys. Rev. Lett.
, vol.98
, Issue.13
, pp. 136105
-
-
Shirasawa, T.1
Hayashi, K.2
Mizuno, S.3
Tanaka, S.4
Nakatsuji, K.5
Komori, F.6
Tochihara, H.7
-
26
-
-
0021374999
-
Gap states in silicon-nitride
-
J. Robertson and M. J. Powell, "Gap states in silicon-nitride", Appl. Phys. Lett. 44(4), 415-417 (1984).
-
(1984)
Appl. Phys. Lett.
, vol.44
, Issue.4
, pp. 415-417
-
-
Robertson, J.1
Powell, M.J.2
|