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Applied Physics A: Materials Science and Processing

Volumn 104, Issue 1, 2011, Pages 239-245

Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films

(8) Cen, Z H a Chen, T P a Ding, L b Liu, Z a Wong, J I a Yang, M a Goh, W P c Fung, S d

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b INSTITUTE OF MICROELECTRONICS (Singapore)

c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

d UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT CONDUCTION; ELECTRICALLY TUNABLE; EXCESS SI; IMPLANTATION DOSE; ION DOSE; LIGHT EMISSION EFFICIENCY; LIGHT EMITTING DEVICES; RED SHIFT; SILICON NITRIDE THIN FILMS;

CARRIER CONCENTRATION; ELECTROLUMINESCENCE; LIGHT; LIGHT EMISSION; SILICON; SILICON NITRIDE; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79959273960 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-010-6117-y Document Type: Article

Times cited : (11)

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