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Applied Physics Letters

Volumn 94, Issue 4, 2009, Pages

Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions

(10) Cen, Z H a Chen, T P a Ding, L a Liu, Y a,b Wong, J I a Yang, M a Liu, Z a Goh, W P c Zhu, F R c Fung, S d

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

d UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMISSION; LUMINESCENCE; NITRIDES; QUENCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; THIN FILM DEVICES; THIN FILMS;

CURRENT TRANSPORTS; HIGH VOLTAGES; LINEAR RELATIONSHIPS; NEAR INFRARED BANDS; SI IONS; SILICON NITRIDE THIN FILMS; ULTRAVIOLET BANDS; VIOLET BANDS; YELLOW BANDS;

ELECTROLUMINESCENCE;

EID: 59349084722 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3068002 Document Type: Article

Times cited : (39)

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