SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 96, Issue 26, 2010, Pages

Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes

(4) Lin, Gong Ru a Pai, Yi Hao a Lin, Cheng Tao a Chen, Chun Chieh a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CARRIER CONFINEMENTS; CHARGE LOSS; INDIUM TIN OXIDE; INTERFACIAL BARRIERS; METAL-INSULATOR-SEMICONDUCTORS; NC INTERFACE; ON CURRENTS; SHORTER DELAYS; SI NANOCRYSTAL;

ELECTROLUMINESCENCE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; METAL INSULATOR BOUNDARIES; MIS DEVICES; NANOCRYSTALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SILICON NITRIDE; TIN; TITANIUM COMPOUNDS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77954318019 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3459144 Document Type: Article

Times cited : (100)

References (12)

1
- 20844446973
- Visible electroluminescence from silicon nanocrystals embedded in amorphous silicon nitride matrix
- DOI 10.1063/1.1925311, 193506
- L. Y. Chen, W. H. Chen, and F. C. N. Hong, Appl. Phys. Lett. APPLAB 0003-6951 86, 193506 (2005). 10.1063/1.1925311 (Pubitemid 40861159)
- (2005) Applied Physics Letters , vol.86 , Issue.19 , pp. 1-3
- Chen, L.-Y.¹ Chen, W.-H.² Hong, F.C.-N.³

2
- 34548696173
- Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating SiN ratio
- DOI 10.1063/1.2783271
- R. Huang, K. J. Chen, H. P. Dong, D. Q. Wang, H. L. Ding, W. Li, J. Xu, Z. Y. Ma, and L. Xu, Appl. Phys. Lett. APPLAB 0003-6951 91, 111104 (2007). 10.1063/1.2783271 (Pubitemid 47415951)
- (2007) Applied Physics Letters , vol.91 , Issue.11 , pp. 111104
- Huang, R.¹ Chen, K.² Dong, H.³ Wang, D.⁴ Ding, H.⁵ Li, W.⁶ Xu, J.⁷ Ma, Z.⁸ Xu, L.⁹

3
- 40749112817
- 4 - Based light-emitting device prepared with low thermal budget
- DOI 10.1109/LED.2007.915379
- W. K. Tan, M. B. Yu, Q. Chen, W. Y. Loh, J. D. Ye, X. H. Zhang, G. Q. Lo, and D. L. Kwongfff, IEEE Electron Device Lett. EDLEDZ 0741-3106 29, 228 (2008). 10.1109/LED.2007.915379 (Pubitemid 351386962)
- (2008) IEEE Electron Device Letters , vol.29 , Issue.3 , pp. 228-231
- Tan, W.K.¹ Yu, M.B.² Chen, Q.³ Loh, W.Y.⁴ Ye, J.D.⁵ Zhang, X.H.⁶ Lo, G.Q.⁷ Kwong, D.-L.⁸

4
- 34249900695
- Red light emission from controlled multilayer stack comprising of thin amorphous silicon and silicon nitride layers
- DOI 10.1063/1.2743743
- W. K. Tan, M. B. Yu, Q. Chen, J. D. Ye, G. Q. Lo, and D. L. Kwong, Appl. Phys. Lett. APPLAB 0003-6951 90, 221103 (2007). 10.1063/1.2743743 (Pubitemid 46872589)
- (2007) Applied Physics Letters , vol.90 , Issue.22 , pp. 221103
- Tan, W.K.¹ Yu, M.B.² Chen, Q.³ Ye, J.D.⁴ Lo, G.Q.⁵ Kwong, D.L.⁶

5
- 33845633820
- Light-emitting silicon nanocrystals and photonic structures in silicon nitride
- DOI 10.1109/JSTQE.2006.883138
- L. Dal Negro, J. H. Yi, J. Michel, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, IEEE J. Sel. Top. Quantum Electron. IJSQEN 1077-260X 12, 1628 (2006). 10.1109/JSTQE.2006.883138 (Pubitemid 44956134)
- (2006) IEEE Journal on Selected Topics in Quantum Electronics , vol.12 , Issue.6 , pp. 1628-1635
- Dal Negro, L.¹ Yi, J.H.² Michel, J.³ Kimerling, L.C.⁴ Hamel, S.⁵ Williamson, A.⁶ Galli, G.⁷

6
- 33747099938
- Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency
- DOI 10.1063/1.2236104
- B. H. Kim, C. H. Cho, S. J. Park, N. M. Park, and G. Y. Sung, Appl. Phys. Lett. APPLAB 0003-6951 89, 063509 (2006). 10.1063/1.2236104 (Pubitemid 44222987)
- (2006) Applied Physics Letters , vol.89 , Issue.6 , pp. 063509
- Kim, B.-H.¹ Cho, C.-H.² Park, S.-J.³ Park, N.-M.⁴ Sung, G.Y.⁵

7
- 0035938373
- APPLAB 0003-6951,. 10.1063/1.1367277
- N. M. Park, T. S. Kim, and S. J. Park, Appl. Phys. Lett. APPLAB 0003-6951 78, 2575 (2001). 10.1063/1.1367277
- (2001) Appl. Phys. Lett. , vol.78 , pp. 2575
- Park, N.M.¹ Kim, T.S.² Park, S.J.³

8
- 34548451162
- Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array
- DOI 10.1063/1.2778352
- G. -R. Lin, C. -J. Lin, and H. -C. Kuo, Appl. Phys. Lett. APPLAB 0003-6951 91, 093122 (2007). 10.1063/1.2778352 (Pubitemid 47352352)
- (2007) Applied Physics Letters , vol.91 , Issue.9 , pp. 093122
- Lin, G.-R.¹ Lin, C.-J.² Kuo, H.-C.³

9
- 17044375507
- High efficiency visible electroluminescence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer
- DOI 10.1063/1.1866638, 071909
- K. S. Cho, N. M. Park, T. Y. Kim, K. H. Kim, G. Y. Sung, and J. H. Shin, Appl. Phys. Lett. APPLAB 0003-6951 86, 071909 (2005). 10.1063/1.1866638 (Pubitemid 40495348)
- (2005) Applied Physics Letters , vol.86 , Issue.7 , pp. 1-3
- Cho, K.S.¹ Park, N.-M.² Kim, T.-Y.³ Kim, K.-H.⁴ Sung, G.Y.⁵ Shin, J.H.⁶

10
- 4243209194
- PRBMDO 0163-1829,. 10.1103/PhysRevB.48.11024
- C. Delerue, G. Allan, and M. Lannoo, Phys. Rev. B PRBMDO 0163-1829 48, 11024 (1993). 10.1103/PhysRevB.48.11024
- (1993) Phys. Rev. B , vol.48 , pp. 11024
- Delerue, C.¹ Allan, G.² Lannoo, M.³

11
- 77949446158
- IEJQA7 0018-9197,. 10.1109/JQE.2009.2030151
- Y. C. Lien, Y. H. Pai, and G. -R. Lin, IEEE J. Quantum Electron. IEJQA7 0018-9197 46, 121 (2010). 10.1109/JQE.2009.2030151
- (2010) IEEE J. Quantum Electron. , vol.46 , pp. 121
- Lien, Y.C.¹ Pai, Y.H.² Lin, G.-R.³

12
- 33144472703
- Electroluminescence and transport properties in amorphous silicon nanostructures
- DOI 10.1088/0957-4484/17/5/044, PII S0957448406126379
- A. Irrera, F. Iacona, I. Crupi, C. D. Presti, G. Franz'o, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino, and F. Priolo, Nanotechnology NNOTER 0957-4484 17, 1428 (2006). 10.1088/0957-4484/17/5/044 (Pubitemid 43269436)
- (2006) Nanotechnology , vol.17 , Issue.5 , pp. 1428-1436
- Irrera, A.¹ Iacona, F.² Crupi, I.³ Presti, C.D.⁴ Franzo, G.⁵ Bongiorno, C.⁶ Sanfilippo, D.⁷ Di Stefano, G.⁸ Piana, A.⁹ Fallica, P.G.¹⁰ Canino, A.¹¹ Priolo, F.¹²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.