The impact of trimethylindium treatment time during growth interruption on the carrier dynamics of InGaN/GaN multiple quantum wells

Thin Solid Films

Volumn 519, Issue 18, 2011, Pages 6092-6096

  Feng, Shih Wei ^a   Lin, Hung Cheng ^b   Chyi, Jen Inn ^b   Tsai, Chin Yi ^a   Huang, C J ^a   Wang, Hsiang Chen ^c   Yang, Fann Wei ^d   Lin, Yen Sheng ^e  

^a NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

^d SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^e I SHOU UNIVERSITY   (Taiwan)

Author keywords

Carrier dynamic; Gallium nitride; Growth interruption; Indium gallium nitride; InGaN GaN; Multiple quantum wells; Photoluminescence; Trimethylindium (TMIn) treatment

Indexed keywords

CARRIER DYNAMICS; GROWTH INTERRUPTION; INDIUM GALLIUM NITRIDE; INGAN/GAN; TRIMETHYLINDIUM;

AGGLOMERATION; GALLIUM NITRIDE; INDIUM; LIGHT; LIGHT EMITTING DIODES; LIGHTING; PHOTOLUMINESCENCE; QUANTUM CHEMISTRY; QUANTUM THEORY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79958177296     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.04.004     Document Type: Article

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