MOVPE growth of InGaN/GaN multiple quantum wells for the blue laser diode applications

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 508-510

  Cheng, A T ^a   Su, Y K ^a   Lai, W C ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides; B3. Laser diodes

Indexed keywords

CRYSTAL GROWTH; GALLIUM NITRIDE; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; X RAY DIFFRACTION;

BLUE LASER DIODE; CRYSTAL QUALITIES; FULL WIDTH AT HALF MAXIMUM (FWHM); HIGH-RESOLUTION X-RAY DIFFRACTION (HRXRD);

SEMICONDUCTOR QUANTUM WELLS;

EID: 33846424269     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.161     Document Type: Article

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