An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells

Journal of Alloys and Compounds

Volumn 489, Issue 2, 2010, Pages 461-464

  Zhao, D G ^a   Jiang, D S ^a   Zhu, J J ^a   Wang, H ^a   Liu, Z S ^a   Zhang, S M ^a   Wang, Y T ^a   Jia, Q J ^b   Yang, Hui ^a,c  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF HIGH ENERGY PHYSICS   (China)

^c SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

Crystal growth; Nitride materials; X ray diffraction

Indexed keywords

EXPERIMENTAL STUDIES; INGAN/GAN; INGAN/GAN MQWS; INTERFACE ROUGHNESS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MULTIPLE QUANTUM WELLS; NITRIDE MATERIALS; PEAK WAVELENGTH; QUANTUM-CONFINED STARK EFFECT; RED SHIFT; WELL THICKNESS;

CRYSTAL GROWTH; CRYSTALLIZATION; DIFFRACTION; ELECTROLUMINESCENCE; GRAIN BOUNDARIES; LIGHT; LIGHT EMISSION; NITRIDES; SPECTROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 70649111287     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.09.086     Document Type: Article

References (20)

1. Nakamura S. Science 281 (1998) 956-961
2. Lin Y.S., Ma K.J., Hsu C., Feng S.W., Cheng Y.C., Liao C.C., Yang C.C., Chou C.C., Lee C.M., and Chyi J.I. Appl. Phys. Lett. 77 (2000) 2988-2990
3. Jeong T.S., Kim J.H., Han M.S., Lim K.Y., and Youn C.J. J. Cryst. Growth 280 (2005) 357-363
4. Nishio J., Sugiura L., Fujimoto H., Kokubun Y., and Kazuhiko I. Appl. Phys. Lett. 70 (1997) 3431-3433
5. Cho Y.H., Song J.J., Keller S., Minsky M.S., Hu E., Mishra U.K., and DenBaars S.P. Appl. Phys. Lett. 73 (1998) 1128-1130
6. Keller S., Keller B.P., Kapolnek D., Abare A.C., Masui H., Coldren L.A., Mishra U.K., and DenBaars S.P. Appl. Phys. Lett. 68 (1996) 3147-3149
7. Bernardini F., Fiorentini V., and Vanderbilt D. Phys. Rev. B 56 (1997) 10024-10027
8. Schmidt M.C., Kim K.C., Sato H., Fellows N., Masui H., Nakamura S., DenBaars S.P., and Speck J.S. Jpn. J. Appl. Phys. 46 (2007) L126-L128
9. Kim K.C., Schmidt M.C., Sato H., Wu F., Fellows N., Jia Z., Saito M., Nakamura S., DenBaars S.P., Speck J.S., and Fujito K. Appl. Phys. Lett. 91 (2007) 181120
10. Bai J., Wang T., and Sakai S. J. Appl. Phys. 88 (2000) 4729-4733
11. Takeuchi T., Sota S., Katsuragawa M., Komori M., Takeuchi H., Amano H., and Akasaki I. Jpn. J. Appl. Phys. Part 2 36 (1997) L382-L385
12. Takeuchi T., Wetzel C., Yamaguchi S., Sakai H., Amano H., and Akasaki I. Appl. Phys. Lett. 73 (1998) 1691-1693
13. Nardelli M.B., Rapcewicz K., and Bernholc J. Appl. Phys. Lett. 71 (1997) 3135-3137
14. Zhang J.C., Jiang D.S., Sun Q., Wang J.F., Wang Y.T., Liu J.P., Chen J., Jin R.Q., Zhu J.J., Yang H., Dai T., and Jia Q.J. Appl. Phys. Lett. 87 (2005) 071908
15. Sun C.K., Keller S., Chiu T.L., Wang G., Minsky M.S., Bowers J.E., and DenBaars S.P. IEEE J. Sel. Top. Quant. Electron. 3 (1997) 731-738
16. Sun C.K., Chiu T.L., Keller S., Wang G., Minsky M.S., DenBaars S.P., and Bowers J.E. Appl. Phys. Lett. 71 (1997) 425-427
17. Shee S.K., Kwon Y.H., Lam J.B., Gainer G.H., Park G.H., Hwang s.J., Little B.D., and Song J.J. J. Cryst. Growth 221 (2000) 373-377
18. Feldmann J., Peter G., and Goek E.O. Phys. Rev. Lett. 59 (1987) 2337-2340
19. Jiang H.X., Ping E.X., Zhou P., and Lin J.Y. Phys. Rev. B 41 (1990) 12949-12952
20. Zhang L.Q., Jiang D.S., Zhu J.J., Zhao D.G., Liu Z.S., Zhang S.M., and Yang H. J. Appl. Phys. 105 (2009) 023104