Vacancy in silicon revisited: Structure and pressure effects

Physical Review Letters

Volumn 81, Issue 10, 1998, Pages 2088-2091

  Antonelli, A ^a   Kaxiras, Efthimios ^b   Chadi, D J ^c  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b HARVARD UNIVERSITY   (United States)

^c NEC LABORATORIES AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001353241     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.81.2088     Document Type: Article

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