Effect of annealing temperature on structural and electrical properties of tantalum nitride thin film resistors deposited on SiO2 Si substrates by dc sputtering technique

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 2, 2006, Pages 682-685

  Cuong, Nguyen Duy ^a   Phuong, Nguyen Mai ^a   Kim, Dong Jin ^b   Kang, Byoung Don ^a,b   Kim, Chang Soo ^c   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

^b KMC Technology Co Ltd   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; NITROGEN; RESISTORS; SPUTTER DEPOSITION; TANTALUM COMPOUNDS;

SPUTTERING TECHNIQUE; TANTALUM NITRIDE THIN FILMS; TEMPERATURE COEFFICIENT OF RESISTANCE (TCR);

THIN FILM CIRCUITS;

EID: 33645514218     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2178375     Document Type: Article

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