Simulation of TaNx deposition by Reactive PVD

Microelectronic Engineering

Volumn 87, Issue 10, 2010, Pages 1907-1913

  Wolf, H ^a   Streiter, R ^b   Friedemann, M ^c   Belsky, P ^b   Bakaeva, O ^b   Letz, T ^c   Gessner, T ^a,b  

^a FRAUNHOFER INSTITUTE FOR ELECTRONIC NANO SYSTEMS ENAS   (Germany)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^c GLOBALFOUNDRIES   (Germany)

Author keywords

Reactive sputtering; Simulation; Tantalum nitride

Indexed keywords

DEPOSITION; DEPOSITION RATES; PHYSICAL VAPOR DEPOSITION; REACTIVE SPUTTERING; TANTALUM COMPOUNDS;

FILM COMPOSITION; NITROGEN FLOW; SIMULATION; SUBSTRATE BIAS; TANTALUM NITRIDES; THICKNESS UNIFORMITY;

VAPOR DEPOSITION;

EID: 84859907519     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.044     Document Type: Article

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