Shift of morphotropic phase boundary in high-performance [111]-oriented epitaxial Pb (Zr, Ti) O 3 thin films

Journal of Applied Physics

Volumn 112, Issue 1, 2012, Pages

  Yu, Qi ^a   Li, Jing Feng ^a   Zhu, Zhi Xiang ^a,b   Xu, Ying ^a   Wang, Qing Ming ^c  

^a TSINGHUA UNIVERSITY   (China)

^b CHINA ELECTRIC POWER RESEARCH INSTITUTE   (China)

^c University of Pittsburgh   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-DEPOSITED FILMS; BULK MATERIALS; EPITAXIAL PZT; FERROELECTRIC POLARIZATION; LEAD ZIRCONATE TITANATE THIN FILMS; MORPHOTROPIC PHASE BOUNDARIES; PB(ZR , TI)O; REMNANT POLARIZATIONS; SINGLE-CRYSTALLINE; SRTIO; XRD PATTERNS; ZR/TI RATIO;

EPITAXIAL FILMS; FERROELECTRIC FILMS; FERROELECTRICITY; LEAD; NIOBIUM; PHASE BOUNDARIES; POLARIZATION; SEMICONDUCTING LEAD COMPOUNDS; SOL-GEL PROCESS; ZIRCONIUM;

EPITAXIAL GROWTH;

EID: 84864141813     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4731214     Document Type: Article

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