Dopant compensation mechanism and leakage current in Pb(Zr0.52, Ti0.48)O3 thin films

Thin Solid Films

Volumn 272, Issue 1, 1996, Pages 112-115

  Barlingay, C K ^a,b   Dey, S K ^a  

^a Arizona State University   (United States)

^b MICROCHIP TECHNOLOGY INC   (United States)

Author keywords

Niobium; Titanium; Transmission electron microscopy

Indexed keywords

DOPING (ADDITIVES); GRAIN BOUNDARIES; LEAD COMPOUNDS; LEAKAGE CURRENTS; MICROSTRUCTURE; NIOBIUM; PEROVSKITE; PHASE COMPOSITION; STOICHIOMETRY; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY;

DOPANT COMPENSATION; LEAD ZIRCONIUM TITANATE;

THIN FILMS;

EID: 0029736173     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)06983-6     Document Type: Article

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