Lowering the reset current and power consumption of phase-change memories with carbon-doped Ge 2Sb 2Te 5

2012 4th IEEE International Memory Workshop, IMW 2012

Volumn , Issue , 2012, Pages

  Hubert, Q ^a,b   Jahan, C ^a   Toffoli, A ^a   Navarro, G ^a   Chandrashekar, S ^a   Noe P ^a   Blachier, D ^a   Sousa, V ^a   Perniola, L ^a   Nodin, J F ^a   Persico, A ^a   Kies, R ^a   Maitrejean, S ^a   Roule, A ^a   Henaff, E ^a   Tessaire, M ^a   Zuliani, P ^c   Annunziata, R ^c   Pananakakis, G ^b   Reimbold, G ^a   De Salvo, B ^a   more..

^a CEA GRENOBLE   (France)

^b IMEP LAHC   (France)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT REDUCTION; CYCLING ENDURANCE; ELECTRICAL PERFORMANCE; GE2SB2TE5; MEMORY TESTS; ORDERS OF MAGNITUDE; PHASE CHANGES; PROGRAMMING WINDOW; RESET CURRENTS; TEST DEVICE;

ANTIMONY; GERMANIUM; PHASE CHANGE MEMORY;

CARBON;

EID: 84864134655     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2012.6213683     Document Type: Conference Paper

References (18)

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