Temperature- and time-dependent conduction controlled by activation energy in PCM

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Fugazza, D ^a   Ielmini, D ^a   Montemurro, G ^a   Lacaita, A L ^a,b  

^a POLITECNICO DI MILANO   (Italy)

^b IFN CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CELL RESISTANCE; CONDUCTION PROCESS; CURRENT LOCALIZATION; CURRENT NOISE; EXPERIMENTAL EVIDENCE; HOPPING CONDUCTION; IN-PHASE; NON-ARRHENIUS BEHAVIOR; POOLE-FRENKEL MODEL; SIZE SCALING; TECHNOLOGY NODES; TEMPERATURE DEPENDENT; TIME DEPENDENCE; TIME-DEPENDENT;

ELECTRON DEVICES; PHASE CHANGE MEMORY;

ACTIVATION ENERGY;

EID: 79951831247     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703443     Document Type: Conference Paper

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