Characterization of poly-silicon emitter BJTs as access devices for phase change memory

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2009, Pages 31-32

  Rajendran, B ^a   Breitwisch, M ^a   Cheek, R ^a   Lee, M H ^b   Shih, Y H ^b   Lung, H L ^b   Lam, C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

NV memory; PCRAM; Poly emitter BJTs

Indexed keywords

ACCESS DEVICES; BI-CMOS PROCESS; BIPOLAR JUNCTION TRANSISTOR; CURRENT DRIVES; DEVICE ARRAYS; HIGH-DENSITY PHASE; ON-OFF RATIO; ORDERS OF MAGNITUDE; PROCESS INTEGRATION; VERTICAL PNP;

BIPOLAR TRANSISTORS; POLYSILICON; SECURITY SYSTEMS; TUNNEL DIODES;

PHASE CHANGE MEMORY;

EID: 77950130918     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2009.5159278     Document Type: Conference Paper

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