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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 7, 2012, Pages 1566-1569

Native point defects at ZnO surfaces, interfaces and bulk films

(12) Brillson, Leonard J a,b Dong, Y a Tuomisto, F c Svensson, B G d Kuznetsov, A Yu d Doutt, D b Mosbacker, H L b Cantwell, G e Zhang, J e Song, J J e Fang, Z Q f Look, D C f,g

a The Ohio State University (United States)

b OHIO STATE UNIVERSITY (United States)

c AALTO UNIVERSITY (Finland)

d UNIVERSITY OF OSLO (Norway)

e ZN Technology Inc (United States)

f WRIGHT STATE UNIVERSITY (United States)

g AIR FORCE RESEARCH LABORATORY (United States)

Author keywords

Defect; Doping; Schottky barrier; ZnO

Indexed keywords

ANNEALING METHODS; DEPTH-RESOLVED; ELECTRONIC DEFECTS; NANO SCALE; OPTOELECTRONIC TECHNOLOGY; SCANNED PROBE; SCHOTTKY BARRIERS; SUB-SURFACES; SURFACE NANOSTRUCTURE; ZNO; ZNO SURFACE;

DEFECTS; DOPING (ADDITIVES); GALLIUM ALLOYS; INTERFACES (MATERIALS); POINT DEFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SURFACE DEFECTS; ZINC OXIDE;

ZINC;

EID: 84864013371 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.201100538 Document Type: Article

Times cited : (17)

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