Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111)

Nanotechnology

Volumn 23, Issue 30, 2012, Pages

  Biermanns, A ^a   Breuer, S ^b,c   Trampert, A ^b   Davydok, A ^a   Geelhaar, L ^b   Pietsch, U ^a  

^a UNIVERSITY OF SIEGEN   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; GAAS; GRAZING INCIDENCE X-RAY DIFFRACTION; GROWTH MODES; PLASTIC RELAXATION; PSEUDOMORPHIC GROWTH; ROUGH INTERFACES; SI(111) SUBSTRATE; SILICON (111); WURTZITES; ZINCBLENDE STRUCTURES;

GALLIUM ALLOYS; GALLIUM ARSENIDE; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NANOWIRES; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC SULFIDE;

SUBSTRATES;

EID: 84863762577     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/30/305703     Document Type: Article

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