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Volumn 7, Issue , 2012, Pages

Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via au-assisted molecular beam epitaxy

Author keywords

MBE growth; Nanowires; X ray diffraction

Indexed keywords

GALLIUM ARSENIDE; GOLD COMPOUNDS; III-V SEMICONDUCTORS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SEMICONDUCTING GALLIUM; X RAY DIFFRACTION; ZINC SULFIDE;

EID: 84857750926     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-109     Document Type: Article
Times cited : (14)

References (17)
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    • Vapor-liquid-solid nucleation of GaAs on Si(111): Growth evolution from traces nanowires
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.