-
1
-
-
42349102358
-
Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry
-
Ju S, Li J, Liu J, Chen P-C, Ha Y-G, Ishikawa F, Chang H, Zhou C, Facchetti A, Janes DB, Marks TJ: Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry. Nano Letters 2007, 8:997-1004.
-
(2007)
Nano Letters
, vol.8
, pp. 997-1004
-
-
Ju, S.1
Li, J.2
Liu, J.3
Chen, P.-C.4
Ha, Y.-G.5
Ishikawa, F.6
Chang, H.7
Zhou, C.8
Facchetti, A.9
Janes, D.B.10
Marks, T.J.11
-
2
-
-
78049332884
-
Parallel array InAs nanowire transistors for mechanically bendable, ultrahigh frequency electronics
-
Takahashi T, Takei K, Adabi E, Fan Z, Niknejad A, Javey A: Parallel array InAs nanowire transistors for mechanically bendable, ultrahigh frequency electronics. ACS Nano 2010, 4:5855-5860.
-
(2010)
ACS Nano
, vol.4
, pp. 5855-5860
-
-
Takahashi, T.1
Takei, K.2
Adabi, E.3
Fan, Z.4
Niknejad, A.5
Javey, A.6
-
3
-
-
77954196867
-
High frequency characterization of a Schottky contact to a GaN
-
Chiang C-J, Wallis T, Gu D, Imtiaz A, Kabos P, Blanchard P, Bertness K, Sanford N, Kim K, Filipovic D: High frequency characterization of a Schottky contact to a GaN. J Appl Phys 2010, 107:124301.
-
(2010)
J Appl Phys
, vol.107
, pp. 124301
-
-
Chiang, C.-J.1
Wallis, T.2
Gu, D.3
Imtiaz, A.4
Kabos, P.5
Blanchard, P.6
Bertness, K.7
Sanford, N.8
Kim, K.9
Filipovic, D.10
-
4
-
-
77952409607
-
Single electron charging in optically active nanowire quantum dots
-
Maartan P, van Kouwen M, Reimer M, Hidma A, van Weert M, Algra R, Bakkers E, Kouwenhoven L, Zwiller V: Single electron charging in optically active nanowire quantum dots. Nano Lett 2010, 10:1817-1822.
-
(2010)
Nano Lett
, vol.10
, pp. 1817-1822
-
-
Maartan, P.1
van Kouwen, M.2
Reimer, M.3
Hidma, A.4
van Weert, M.5
Algra, R.6
Bakkers, E.7
Kouwenhoven, L.8
Zwiller, V.9
-
5
-
-
56849112634
-
Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapour deposition
-
Bao X-Y, Soci C, Susac D, Bratvold J, Aplin DPR, Wei W, Chen C-Y, Dayeh SA, Kavanagh KL, Wang D: Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapour deposition. Nano Letters 2008, 8:3755-3760.
-
(2008)
Nano Letters
, vol.8
, pp. 3755-3760
-
-
Bao, X.-Y.1
Soci, C.2
Susac, D.3
Bratvold, J.4
Aplin, D.P.R.5
Wei, W.6
Chen, C.-Y.7
Dayeh, S.A.8
Kavanagh, K.L.9
Wang, D.10
-
6
-
-
56249104396
-
Selective-area growth of GaAs and InAs nanowires - homo- and heteroepitaxy using SiNx templates
-
Paetzelt H, Gottschalch V, Bauer J, Benndorf G, Wagner G: Selective-area growth of GaAs and InAs nanowires - homo- and heteroepitaxy using SiNx templates. J Cryst Growth 2008, 310:5093-5097.
-
(2008)
J Cryst Growth
, vol.310
, pp. 5093-5097
-
-
Paetzelt, H.1
Gottschalch, V.2
Bauer, J.3
Benndorf, G.4
Wagner, G.5
-
7
-
-
33751294582
-
J Phys D: Semiconductor nanowires
-
Lu W, Lieber C: J Phys D: Semiconductor nanowires. Appl Phys 2006, 39:21, 387-391.
-
(2006)
Appl Phys
, vol.39
, Issue.21
, pp. 387-391
-
-
Lu, W.1
Lieber, C.2
-
8
-
-
38549084111
-
Growth and properties of silicon nanowires for lowdimensional devices
-
Wemer P: Growth and properties of silicon nanowires for lowdimensional devices. Solid State Phenom 2008, 131-133: 535-540.
-
(2008)
Solid State Phenom
, vol.131-133
, pp. 535-540
-
-
Wemer, P.1
-
9
-
-
70350564229
-
X-ray investigation of the interface structure of free standing InAs nanowires grown on GaAs [-1-1-1]
-
Bauer J, Pietsch U, Davydok A, Biermanns A, Grenzer J, Gottschalch V, Wagner G: X-ray investigation of the interface structure of free standing InAs nanowires grown on GaAs [-1-1-1]. Appl Phys-Mater Sci Process 2009, 96:851-859.
-
(2009)
Appl Phys-Mater Sci Process
, vol.96
, pp. 851-859
-
-
Bauer, J.1
Pietsch, U.2
Davydok, A.3
Biermanns, A.4
Grenzer, J.5
Gottschalch, V.6
Wagner, G.7
-
10
-
-
77957581134
-
Vapor-liquid-solid nucleation of GaAs on Si(111): Growth evolution from traces nanowires
-
Breuer S, Hilse M, Trampert A, Geelhaar L, Riechert H: Vapor-liquid-solid nucleation of GaAs on Si(111): growth evolution from traces nanowires. Phys Rev B 2010, 82:075406.
-
(2010)
Phys Rev B
, vol.82
, pp. 075406
-
-
Breuer, S.1
Hilse, M.2
Trampert, A.3
Geelhaar, L.4
Riechert, H.5
-
11
-
-
33947330741
-
GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperature
-
Harmand JC, Tchernycheva M, Patriarche G, Travers L, Glas F, Cirlin G: GaAs nanowires formed by Au-assisted molecular beam epitaxy: effect of growth temperature. J Cryst Growth 2007, 301-302: 853-856.
-
(2007)
J Cryst Growth
, vol.301-302
, pp. 853-856
-
-
Harmand, J.C.1
Tchernycheva, M.2
Patriarche, G.3
Travers, L.4
Glas, F.5
Cirlin, G.6
-
12
-
-
77649155266
-
Stage in molecular beam epitaxy growth of GaAs nanowires studied by x-ray diffraction
-
Mariager S, Lauridsen S, Sørensen C, Dohn A, Willmott P, Nygard J, Feidenhans R: Stage in molecular beam epitaxy growth of GaAs nanowires studied by x-ray diffraction. Nanotechnology 2010, 21:115603.
-
(2010)
Nanotechnology
, vol.21
, pp. 115603
-
-
Mariager, S.1
Lauridsen, S.2
Sørensen, C.3
Dohn, A.4
Willmott, P.5
Nygard, J.6
Feidenhans, R.7
-
13
-
-
34248172982
-
Photon-counting X-ray imaging at kilohertz frame rates
-
Ponchut C, Clement J, Rigal J-M, Papillon E, Vallerga J, LaMarra D, Mikulec B: Photon-counting X-ray imaging at kilohertz frame rates. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2007, 576:109-112.
-
(2007)
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
, vol.576
, pp. 109-112
-
-
Ponchut, C.1
Clement, J.2
Rigal, J.-M.3
Papillon, E.4
Vallerga, J.5
Lamarra, D.6
Mikulec, B.7
-
14
-
-
84255167056
-
The highresolution diffraction beamline P08 at PETRA III
-
Seeck OH, Deiter C, Pflaum K, Bertram F, Beerlink A, Franz H, Horbach J, Schulte-Schrepping H, Murphy BM, Greve M, Magnussen O: The highresolution diffraction beamline P08 at PETRA III. J Sync Rad 2012, 19:30-38.
-
(2012)
J Sync Rad
, vol.19
, pp. 30-38
-
-
Seeck, O.H.1
Deiter, C.2
Pflaum, K.3
Bertram, F.4
Beerlink, A.5
Franz, H.6
Horbach, J.7
Schulte-Schrepping, H.8
Murphy, B.M.9
Greve, M.10
Magnussen, O.11
-
16
-
-
0000756466
-
A dynamical theory of diffraction for a distorted crystal
-
Takagi S: A dynamical theory of diffraction for a distorted crystal. J Phys Soc Jpn 1969, 26:1239.
-
(1969)
J Phys Soc Jpn
, vol.26
, pp. 1239
-
-
Takagi, S.1
|