Structural polytypism and residual strain in GaAs nanowires grown on Si(111) probed by single-nanowire X-ray diffraction

Journal of Applied Crystallography

Volumn 45, Issue 2, 2012, Pages 239-244

  Biermanns, Andreas ^a   Breuer, Steffen ^b,c   Davydok, Anton ^a   Geelhaar, Lutz ^b   Pietsch, Ullrich ^a  

^a UNIVERSITY OF SIEGEN   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

GaAs nanowires; phase arrangement; residual strain; structural polytypism

Indexed keywords

BRAGG REFLECTION; GAAS; GROWTH CONDITIONS; HIGH RESOLUTION X RAY DIFFRACTION; PHASE ARRANGEMENT; POLYTYPISM; RESIDUAL STRAINS; SI (1 1 1); STRUCTURAL COMPOSITION; SUBSTRATE INTERFACE; SYNCHROTRON BEAMS; WURTZITES; ZINC-BLENDE;

GALLIUM ARSENIDE; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM; SILICON; X RAY DIFFRACTION; ZINC SULFIDE;

NANOWIRES;

EID: 84859773792     PISSN: 00218898     EISSN: 16005767     Source Type: Journal    
DOI: 10.1107/S0021889812003007     Document Type: Article

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