Comparison of negative resists for 100 nm electron-beam direct write and mask making applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 6, 1998, Pages 3289-3293

  Nordquist, K J ^a   Resnick, D J ^a   Ainley, E S ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001379856     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590366     Document Type: Review

References (6)

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2. J. M. J. Frechet, F. M. Houlihan, F. Bouchard, E. Eichler, A. Hult, R. Allen, S. A. MacDonald, H. Ito, and C. G. Wilson, Photopolymer Principles, Processes, and Materials, Proceedings, 1-10 September 1985.
3. D. P. Mancini, D. J. Resnick, K. J. Nordquist, W. J. Dauksher, and J. W. Thackeray, Proc. SPIE 2723, 112 (1996).
4. D. S. MacIntyre and S. Thorns, "High Resolution Electron Beam Lithography Studies on Shipley Chemically Amplified DUV Resists," Micro and Nano Engineering Proceedings, 1997, Vol. 35, p. 213.
5. T. H. Fedynyshyn, M. F. Cronin, L. C. Poli, and C. D. Kondek, "Process Optimization of the ANR Electron Beam Resist Microposit SAL 605 E-beam Resist," Shipley Publication (1991).
6. K. Nordquist et al., J. Vac. Sci. Technol. B 15, 2274 (1997).