Vertically aligned carbon nanotube field-effect transistors

Carbon

Volumn 50, Issue 12, 2012, Pages 4628-4632

  Li, Jingqi ^a   Zhao, Chao ^a   Wang, Qingxiao ^a   Zhang, Qiang ^a   Wang, Zhihong ^a   Zhang, X X ^a   Abutaha, A I ^a   Alshareef, H N ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL AREA; CHANNEL LENGTH; DIELECTRIC THICKNESS; GATE ELECTRODES; SEMICONDUCTING CARBON NANOTUBES; SOURCE AND DRAIN ELECTRODES; SOURCE AND DRAINS; SUBMICROMETERS; SUBSTRATE SURFACE; VERTICALLY ALIGNED CARBON NANOTUBE;

GATE DIELECTRICS; NANOSENSORS; THICKNESS MEASUREMENT;

CARBON NANOTUBES;

EID: 84863717707     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2012.05.049     Document Type: Article

References (27)

1. S.J. Tan, A.R.M. Verschueren, and C. Dekker Room-temperature transistor based on a single carbon nanotube Nature (London) 393 1998 49 52
2. P. Avouris Carbon nanotube electronics and photonics Phys Today 62 2009 34 40
3. Martel R, Wong H-SP, Chan K, Avouris P. Carbon nanotube field effect transistors for logic applications. Proc IEDM 2001;159-166.
4. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai Ballistic carbon nanotube field-effect transistors Nature 424 2003 654 657
5. T. Dürkop, S.A. Getty, E. Cobas, and M.S. Fuhrer Extraordinary mobility in semiconducting carbon nanotubes Nano Lett 4 1 2004 35 39
6. Appenzeller J, Lin Y-M, Knoch J, Avouris P. Band-to-band tunneling in carbon nanotube field-effect transistors. Phys Rev Lett 2004;93 (19):196805-1-196805-4.
7. Y.-M. Lin, J. Appenzeller, J. Knoch, and P. Avouris High-performance carbon nanotube field-effect transistor with tunable polarities IEEE Trans Nanotechnol 4 5 2005 481 489
8. Y. Lu, S. Bangsaruntip, X. Wang, L. Zhang, Y. Nishi, and H. Dai DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high k dielectrics for nanotube transistors with 60mV/Decade switching J Am Chem Soc 128 2006 3518 3519
9. Rosenblatt S, Lin H, Sazonova V, Tiwari S, McEuen PL. Mixing at 50 GHz using a single-walled carbon nanotube transistor. Appl Phys Lett 2005;87:153111-1-153111-3.
10. Louarn AL, Kapche F, Bethoux JM, Happy H, Dambrine G, Dervcke V, et al. Intrinsic current gain cutoff frequency of 30 GHz with carbon nanotube transistors. Appl Phys Lett 2007;90:233108-1-233108-3.
11. W.B. Choi, J.U. Chu, K.S. Jeong, E.J. Bae, and J.-W. Lee Ultrahigh-density nanotransistors by using selectively grown vertical carbon nanotubes Appl Phys Lett 79 2001 3696 3698
12. A.D. Franklin, R.A. Sayer, T.D. Sands, D.B. Janes, and T.S. Fisher Vertical carbon nanotube devices with nanoscale lengths controlled without lithography IEEE Trans Nanotechnol 8 2009 469 476
13. J. Moers Turning the world vertical: MOSFETs with current flow perpendicular to the wafer surface Appl Phys A 87 2007 531 537
14. R. Krupke, F. Hennrich, H. Löhneysen, and M.M. Kappes Separation of metallic from semiconducting single-walled carbon nanotubes Science 301 2003 344 347
15. R. Krupke, F. Hennrich, M.M. Kappes, and H. Löhneysen Surface conductance induced dielectrophoresis of semiconducting single-walled carbon nanotubes Nano Lett 4 8 2004 1395 1399
16. M.S. Dresselhaul, G. Dresselhaus, R. Saito, and A. Jorio Raman spectroscopy of carbon nanotubes Phys Rep 409 2005 47 99
17. Heinze S, Tersoff J, Martel R, Dervcke V, Appenzeller J, Avouris P. Carbon nanotube as Schottky barrier transistors. Phys Rev Lett 2002;89(10):106801-1-106801-4.
18. D. McClain, N. Thomas, S. Youkey, R. Schaller, J. Jiao, and K.P. O'Brien Impact of oxygen adsorption on a population of mass produced carbon nanotube field effect transistors Carbon 47 2009 1493 1500
19. Appenzeller J, Knoch J, Dervcke V, Martel R, Wind S, Avouris P. Field modulated carrier transport in carbon nanotube transistors. Phys Rev Lett 2002;89 (12):126801-1-126801-4.
20. Q. Cao, M. Xia, C. Kocabas, M. Shim, J.A. Rogers, and S.V. Rotkin Gate capacitance coupling of single-walled carbon nanotube thin film transistors Appl Phys Lett 90 2007 023516-1 023516-3
21. C. Wang, J. Zhang, K. Ryu, A. Badmaev, L.G.D. Arco, and C. Zhou Wafer-scale fabrication of separated carbon nanotube thin-film transistors for display applications Nano Lett 9 12 2009 4285 4291
22. S. Rosenblatt, Y. Yaish, J. Park, J. Gore, V. Sazonova, and P.L. McEuen High performance electrolyte gated carbon nanotube transistors Nano Lett 2 8 2002 869 872
23. N. Rouhi, D. Jain, K. Zand, and P.J. Burke Fundamental limits on the mobility of nanotube-based semiconducting inks Adv Mater 23 2011 94 99
24. Z. Liu, Z. Qiu, Z. Zhang, L. Zheng, and S. Zhang Mobility extraction for nanotube TFTs IEEE Electron Device Lett 32 7 2011 913 915
25. S.Y. Lee, S.W. Lee, S.M. Kim, W.J. Yu, Y.W. Jo, and Y.H. Lee Scalable complementary logic gates with chemically doped semiconducting carbon nanotube transistors ACS Nano 5 3 2011 2369 2375
26. Y. Miyata, K. Shiozawa, Y. Asada, Y. Ohno, R. Kiaura, and T. Mizutani Length-sorted semiconducting carbon nanotubes for high-mobility thin film transistors Nano Res 4 10 2011 963 970
27. M. Engel, J.P. Small, M. Steiner, M. Freitag, A.A. Green, and M.C. Hersam Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays ACS Nano 2 12 2008 2445 2452