Self-heating effects in gate-all-around silicon nanowire MOSFETs: Modeling and analysis

Proceedings - International Symposium on Quality Electronic Design, ISQED

Volumn , Issue , 2012, Pages 727-731

  Huang, Xin ^a   Zhang, Tianwei ^a   Wang, Rusheng ^a   Liu, Changze ^a   Liu, Yuchao ^a   Huang, Ru ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

equivalent thermal network; Gate all around (GAA); self heating effect; silicon nanowire MOSFET (SNWT)

Indexed keywords

CURRENT DRIVING; ELECTRO-THERMAL MODEL; EQUIVALENT THERMAL; GATE LENGTH; GATE-ALL-AROUND; MODELING AND ANALYSIS; MOS-FET; SELF-HEATING EFFECT; SILICON NANOWIRE MOSFETS; STRUCTURE FEATURES; STRUCTURE PARAMETER; THERMAL-AWARE DESIGN;

BICMOS TECHNOLOGY; DESIGN; GALLIUM ALLOYS; NANOWIRES; OPTIMIZATION; SILICON ON INSULATOR TECHNOLOGY; SURFACE ROUGHNESS; THERMAL CONDUCTIVITY; THERMOGRAPHY (TEMPERATURE MEASUREMENT);

MOSFET DEVICES;

EID: 84863692457     PISSN: 19483287     EISSN: 19483295     Source Type: Conference Proceeding    
DOI: 10.1109/ISQED.2012.6187572     Document Type: Conference Paper

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