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Volumn , Issue , 2008, Pages
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Experimental study on quasi-ballistic transport in silicon nanowire transistors and the impact of self-heating effects
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Author keywords
[No Author keywords available]
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Indexed keywords
BALLISTIC EFFICIENCIES;
BALLISTIC TRANSPORTS;
EXPERIMENTAL EXTRACTIONS;
EXPERIMENTAL STUDIES;
GATE-ALL-AROUND;
HEAT TRANSPORTS;
INTRINSIC POTENTIALS;
PHONON-BOUNDARY SCATTERINGS;
QUASI-BALLISTIC;
QUASI-BALLISTIC TRANSPORTS;
ROOM TEMPERATURES;
SELF-HEATING;
SELF-HEATING EFFECTS;
SI SUBSTRATES;
SILICON NANOWIRE TRANSISTORS;
SOI DEVICES;
BICMOS TECHNOLOGY;
ELECTRON DEVICES;
GALLIUM ALLOYS;
HEATING;
IMPACT RESISTANCE;
MOSFET DEVICES;
NANOWIRES;
SILICON ON INSULATOR TECHNOLOGY;
TRANSPORT PROPERTIES;
BALLISTICS;
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EID: 64549102417
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEDM.2008.4796806 Document Type: Conference Paper |
Times cited : (25)
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References (16)
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